S29GL256P11FAIV22
For Reference Only
| Part Number | S29GL256P11FAIV22 |
| PNEDA Part # | S29GL256P11FAIV22 |
| Description | IC FLASH 256M PARALLEL 64BGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,526 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S29GL256P11FAIV22 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S29GL256P11FAIV22 |
| Category | Semiconductors › Memory ICs › Memory |
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S29GL256P11FAIV22 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | GL-P |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mb (32M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 110ns |
| Access Time | 110ns |
| Voltage - Supply | 1.65V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 64-LBGA |
| Supplier Device Package | 64-FBGA (13x11) |
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Manufacturer Cypress Semiconductor Corp Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, DDR II Memory Size 18Mb (1M x 18) Memory Interface Parallel Clock Frequency 250MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 1.7V ~ 1.9V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 165-LBGA Supplier Device Package 165-FBGA (13x15) |
Manufacturer Toshiba Memory America, Inc. Series e•MMC™ Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND Memory Size 256Gb (32G x 8) Memory Interface eMMC Clock Frequency 52MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 153-WFBGA Supplier Device Package 153-WFBGA (11.5x13) |
Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 100MHz Write Cycle Time - Word, Page - Access Time 8ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 119-BGA Supplier Device Package 119-PBGA (14x22) |
Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format PSRAM Technology PSRAM (Pseudo SRAM) Memory Size 128Mb (8M x 16) Memory Interface Parallel Clock Frequency 66MHz Write Cycle Time - Word, Page 85ns Access Time 85ns Voltage - Supply 1.7V ~ 1.95V Operating Temperature -40°C ~ 105°C (TC) Mounting Type Surface Mount Package / Case 54-VFBGA Supplier Device Package 54-VFBGA (8x10) |
