S29GL256P10FFI012
For Reference Only
| Part Number | S29GL256P10FFI012 |
| PNEDA Part # | S29GL256P10FFI012 |
| Description | IC FLASH 256M PARALLEL 64BGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 111 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S29GL256P10FFI012 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S29GL256P10FFI012 |
| Category | Semiconductors › Memory ICs › Memory |
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S29GL256P10FFI012 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | GL-P |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mb (32M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 100ns |
| Access Time | 100ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 64-LBGA |
| Supplier Device Package | 64-FBGA (13x11) |
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Manufacturer GigaDevice Semiconductor (HK) Limited Series - Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 32Mb (4M x 8) Memory Interface SPI - Quad I/O Clock Frequency 120MHz Write Cycle Time - Word, Page 50µs, 2.4ms Access Time - Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 8-SOIC (0.209", 5.30mm Width) Supplier Device Package 8-SOP |
Manufacturer Microchip Technology Series - Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 256Kb (32K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 3ms Access Time 90ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature -55°C ~ 125°C (TC) Mounting Type Surface Mount Package / Case 32-CLCC Supplier Device Package 32-LCC (11.43x13.97) |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 18Mb (512K x 36) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.1ns Voltage - Supply 2.375V ~ 2.625V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 165-TBGA Supplier Device Package 165-TFBGA (13x15) |
