S29GL256N11FFA023
For Reference Only
| Part Number | S29GL256N11FFA023 |
| PNEDA Part # | S29GL256N11FFA023 |
| Description | IC FLASH 256M PARALLEL |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,444 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S29GL256N11FFA023 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S29GL256N11FFA023 |
| Category | Semiconductors › Memory ICs › Memory |
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S29GL256N11FFA023 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | Automotive, AEC-Q100, GL-N |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mb (32M x 8, 16M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 110ns |
| Access Time | 110ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 64-LBGA |
| Supplier Device Package | 64-FBGA (13x11) |
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Manufacturer Microchip Technology Series - Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 16Kb (1K x 16) Memory Interface SPI Clock Frequency 3MHz Write Cycle Time - Word, Page 2ms Access Time - Voltage - Supply 4.5V ~ 5.5V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |
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Manufacturer Micron Technology Inc. Series Automotive, AEC-Q100 Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR2 Memory Size 1Gb (64M x 16) Memory Interface Parallel Clock Frequency 400MHz Write Cycle Time - Word, Page 15ns Access Time 400ps Voltage - Supply 1.7V ~ 1.9V Operating Temperature -40°C ~ 105°C (TA) Mounting Type Surface Mount Package / Case 84-TFBGA Supplier Device Package 84-FBGA (8x12.5) |
Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 36Mb (1M x 36) Memory Interface Parallel Clock Frequency 167MHz Write Cycle Time - Word, Page - Access Time 3.4ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
