S29GL128S90FAI023
For Reference Only
| Part Number | S29GL128S90FAI023 |
| PNEDA Part # | S29GL128S90FAI023 |
| Description | IC FLASH 128M PARALLEL 64BGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,154 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S29GL128S90FAI023 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S29GL128S90FAI023 |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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S29GL128S90FAI023 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | GL-S |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 60ns |
| Access Time | 90ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 64-LBGA |
| Supplier Device Package | 64-FBGA (13x11) |
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Manufacturer Micron Technology Inc. Series - Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND Memory Size 1Gb (128M x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 25ns Access Time 25ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 63-TFBGA Supplier Device Package 63-VFBGA (9.5x12) |
Manufacturer Adesto Technologies Series Mavriq™ Memory Type Non-Volatile Memory Format CBRAM® Technology CBRAM Memory Size 64kb (32B Page Size) Memory Interface SPI Clock Frequency 20MHz Write Cycle Time - Word, Page 100µs, 2.5ms Access Time - Voltage - Supply 1.65V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 8Gb (512M x 16) Memory Interface Parallel Clock Frequency 800MHz Write Cycle Time - Word, Page 15ns Access Time 20ns Voltage - Supply 1.283V ~ 1.45V Operating Temperature -40°C ~ 95°C (TC) Mounting Type Surface Mount Package / Case 96-LFBGA Supplier Device Package 96-LFBGA (10x14) |
