S29GL032N11FFIS23
For Reference Only
| Part Number | S29GL032N11FFIS23 |
| PNEDA Part # | S29GL032N11FFIS23 |
| Description | IC FLASH 32M PARALLEL 64BGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,006 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 20 - Apr 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S29GL032N11FFIS23 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S29GL032N11FFIS23 |
| Category | Semiconductors › Memory ICs › Memory |
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S29GL032N11FFIS23 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | GL-N |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 32Mb (4M x 8, 2M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 110ns |
| Access Time | 110ns |
| Voltage - Supply | 1.65V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 64-LBGA |
| Supplier Device Package | 64-FBGA (13x11) |
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Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR2 Memory Size 1Gb (32M x 32) Memory Interface Parallel Clock Frequency 533MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 1.14V ~ 1.95V Operating Temperature -30°C ~ 85°C (TC) Mounting Type Surface Mount Package / Case 168-WFBGA Supplier Device Package 168-WFBGA (12x12) |
Manufacturer Cypress Semiconductor Corp Series - Memory Type Non-Volatile Memory Format NVSRAM Technology NVSRAM (Non-Volatile SRAM) Memory Size 4Mb (256K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 45ns Access Time 45ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 54-TSOP (0.400", 10.16mm Width) Supplier Device Package 54-TSOP II |
