S29GL01GT12DHVV13
For Reference Only
| Part Number | S29GL01GT12DHVV13 |
| PNEDA Part # | S29GL01GT12DHVV13 |
| Description | IC FLASH 1G PARALLEL |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,392 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S29GL01GT12DHVV13 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S29GL01GT12DHVV13 |
| Category | Semiconductors › Memory ICs › Memory |
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S29GL01GT12DHVV13 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | GL-T |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 1Gb (128M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 60ns |
| Access Time | 120ns |
| Voltage - Supply | 1.65V ~ 3.6V |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 64-LBGA |
| Supplier Device Package | 64-FBGA (9x9) |
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Manufacturer Series - Memory Type Non-Volatile Memory Format EPROM Technology EPROM - OTP Memory Size 1Kb (256b x 4 pages) Memory Interface Single Wire Clock Frequency - Write Cycle Time - Word, Page - Access Time - Voltage - Supply 2.65V ~ 5.5V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR (ZBT) Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page - Access Time 8.5ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 165-TBGA Supplier Device Package 165-CABGA (13x15) |
Manufacturer Winbond Electronics Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR Memory Size 512Mb (16M x 32) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page 15ns Access Time 5ns Voltage - Supply 1.7V ~ 1.95V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 90-TFBGA Supplier Device Package 90-VFBGA (8x13) |
