S29GL01GS11WEI019
For Reference Only
| Part Number | S29GL01GS11WEI019 |
| PNEDA Part # | S29GL01GS11WEI019 |
| Description | IC FLASH 1G PARALLEL WAFER |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,322 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S29GL01GS11WEI019 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S29GL01GS11WEI019 |
| Category | Semiconductors › Memory ICs › Memory |
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S29GL01GS11WEI019 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | GL-S |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 1Gb (64M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 60ns |
| Access Time | 110ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Wafer |
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Manufacturer Micron Technology Inc. Series Automotive, AEC-Q100 Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 4Mb (512K x 8, 256K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 55ns Access Time 55ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 44-SOIC (0.496", 12.60mm Width) Supplier Device Package 44-SO |
Manufacturer Microchip Technology Series SST38 Memory Type Non-Volatile Memory Format FLASH Technology FLASH Memory Size 64Mb (4M x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 10µs Access Time 90ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 48-TFBGA Supplier Device Package 48-TFBGA (6x8) |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 18Mb (512K x 36) Memory Interface Parallel Clock Frequency 117MHz Write Cycle Time - Word, Page - Access Time 7.5ns Voltage - Supply 2.375V ~ 2.625V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
