S29GL01GS10FHSS13
For Reference Only
| Part Number | S29GL01GS10FHSS13 |
| PNEDA Part # | S29GL01GS10FHSS13 |
| Description | IC FLASH 1G PARALLEL 64BGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,636 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S29GL01GS10FHSS13 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S29GL01GS10FHSS13 |
| Category | Semiconductors › Memory ICs › Memory |
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S29GL01GS10FHSS13 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | GL-S |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 1Gb (64M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 60ns |
| Access Time | 100ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 64-LBGA |
| Supplier Device Package | 64-FBGA (13x11) |
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Manufacturer Cypress Semiconductor Corp Series GL-N Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 32Mb (4M x 8, 2M x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 110ns Access Time 110ns Voltage - Supply 1.65V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 64-LBGA Supplier Device Package 64-FBGA (13x11) |
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Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, DDR II Memory Size 18Mb (1M x 18) Memory Interface Parallel Clock Frequency 300MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 1.71V ~ 1.89V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 165-LBGA Supplier Device Package 165-LFBGA (13x15) |
Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Dual Port, Asynchronous Memory Size 32Kb (2K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 35ns Access Time 35ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x14) |
