S29AL008J70SFI010
For Reference Only
| Part Number | S29AL008J70SFI010 |
| PNEDA Part # | S29AL008J70SFI010 |
| Description | IC FLASH 8M PARALLEL |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,310 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S29AL008J70SFI010 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S29AL008J70SFI010 |
| Category | Semiconductors › Memory ICs › Memory |
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S29AL008J70SFI010 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | AL-J |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 8Mb (1M x 8, 512K x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 70ns |
| Access Time | 70ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 56-SOP (0.524", 13.30mm Width) |
| Supplier Device Package | 56-SSOP |
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Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 4Gb (512M x 8) Memory Interface Parallel Clock Frequency 933MHz Write Cycle Time - Word, Page - Access Time 20ns Voltage - Supply 1.283V ~ 1.45V Operating Temperature 0°C ~ 95°C (TC) Mounting Type Surface Mount Package / Case 78-TFBGA Supplier Device Package 78-FBGA (7.5x10.6) |
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Manufacturer Cypress Semiconductor Corp Series MoBL® Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 4Mb (256K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 45ns Access Time 45ns Voltage - Supply 2.2V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 44-TSOP (0.400", 10.16mm Width) Supplier Device Package 44-TSOP II |
Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (512K x 18) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.2ns Voltage - Supply 2.375V ~ 2.625V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
