S26KL256SDABHI030
For Reference Only
| Part Number | S26KL256SDABHI030 |
| PNEDA Part # | S26KL256SDABHI030 |
| Description | IC FLASH 256M PARALLEL 24FBGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 11,736 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S26KL256SDABHI030 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S26KL256SDABHI030 |
| Category | Semiconductors › Memory ICs › Memory |
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S26KL256SDABHI030 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | HyperFlash™ KL |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mb (32M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 100MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 96ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 24-VBGA |
| Supplier Device Package | 24-FBGA (6x8) |
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Manufacturer Cypress Semiconductor Corp Series GL-T Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 1Gb (128M x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 60ns Access Time 100ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 56-VFBGA Supplier Device Package 56-FBGA (9x7) |
Manufacturer Alliance Memory, Inc. Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 256Kb (32K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 15ns Access Time 15ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package 28-SOJ |
Manufacturer Cypress Semiconductor Corp Series GL-P Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 128Mb (16M x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 90ns Access Time 90ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature 0°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 64-LBGA Supplier Device Package 64-FBGA (13x11) |
Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR Memory Size 512Mb (16M x 32) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page 15ns Access Time 5.0ns Voltage - Supply 1.7V ~ 1.95V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 90-VFBGA Supplier Device Package 90-VFBGA (8x13) |
