S25FL256LDPMFI003
For Reference Only
| Part Number | S25FL256LDPMFI003 |
| PNEDA Part # | S25FL256LDPMFI003 |
| Description | IC NOR |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,070 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S25FL256LDPMFI003 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S25FL256LDPMFI003 |
| Category | Semiconductors › Memory ICs › Memory |
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S25FL256LDPMFI003 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | FL-L |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mb (32M x 8) |
| Memory Interface | SPI - Quad I/O, QPI |
| Clock Frequency | 66MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 16-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package | 16-SOIC |
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Manufacturer Microchip Technology Series - Memory Type Non-Volatile Memory Format FLASH Technology FLASH Memory Size 2Mb (256K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 50µs Access Time 120ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature 0°C ~ 70°C (TC) Mounting Type Through Hole Package / Case 32-DIP (0.600", 15.24mm) Supplier Device Package 32-PDIP |
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Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Dual Port, Synchronous Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 3.6ns Voltage - Supply 3.15V ~ 3.45V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 256-LBGA Supplier Device Package 256-CABGA (17x17) |
Manufacturer Cypress Semiconductor Corp Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 18Mb (512K x 36) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
