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S1BHE3_A/I

S1BHE3_A/I

For Reference Only

Part Number S1BHE3_A/I
PNEDA Part # S1BHE3_A-I
Description DIODE GEN PURP 100V 1A DO214AC
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 8,208
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

S1BHE3_A/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberS1BHE3_A/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
S1BHE3_A/I, S1BHE3_A/I Datasheet (Total Pages: 4, Size: 80.09 KB)
PDFS1JHE3/61T Datasheet Cover
S1JHE3/61T Datasheet Page 2 S1JHE3/61T Datasheet Page 3 S1JHE3/61T Datasheet Page 4

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S1BHE3_A/I Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.1V @ 1A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)1.8µs
Current - Reverse Leakage @ Vr1µA @ 100V
Capacitance @ Vr, F12pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C

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