Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RSS090P03FU7TB

RSS090P03FU7TB

For Reference Only

Part Number RSS090P03FU7TB
PNEDA Part # RSS090P03FU7TB
Description MOSFET P-CH 30V 9A 8SOIC
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 7,110
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RSS090P03FU7TB Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRSS090P03FU7TB
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RSS090P03FU7TB, RSS090P03FU7TB Datasheet (Total Pages: 5, Size: 85.91 KB)
PDFRSS090P03FU7TB Datasheet Cover
RSS090P03FU7TB Datasheet Page 2 RSS090P03FU7TB Datasheet Page 3 RSS090P03FU7TB Datasheet Page 4 RSS090P03FU7TB Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RSS090P03FU7TB Datasheet
  • where to find RSS090P03FU7TB
  • Rohm Semiconductor

  • Rohm Semiconductor RSS090P03FU7TB
  • RSS090P03FU7TB PDF Datasheet
  • RSS090P03FU7TB Stock

  • RSS090P03FU7TB Pinout
  • Datasheet RSS090P03FU7TB
  • RSS090P03FU7TB Supplier

  • Rohm Semiconductor Distributor
  • RSS090P03FU7TB Price
  • RSS090P03FU7TB Distributor

RSS090P03FU7TB Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs14mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs39nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4000pF @ 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

AOTF11S60L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

aMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

399mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

4.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

545pF @ 100V

FET Feature

-

Power Dissipation (Max)

38W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3F

Package / Case

TO-220-3 Full Pack

MMBF0201NLT1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1Ohm @ 300mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

45pF @ 5V

FET Feature

-

Power Dissipation (Max)

225mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

FQPF27N25T

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2450pF @ 25V

FET Feature

-

Power Dissipation (Max)

55W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

BS107AG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

250mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.4Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

60pF @ 25V

FET Feature

-

Power Dissipation (Max)

350mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

IRFH8321TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

21A (Ta), 83A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

59nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.4W (Ta), 54W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (5x6)

Package / Case

8-TQFN Exposed Pad

Recently Sold

PIC18F63J11-I/PT

PIC18F63J11-I/PT

Microchip Technology

IC MCU 8BIT 8KB FLASH 64TQFP

SMAJ6.0A

SMAJ6.0A

Bourns

TVS DIODE 6V 10.3V SMA

A3P250-VQG100I

A3P250-VQG100I

Microsemi

IC FPGA 68 I/O 100VQFP

PIC32MX250F128D-I/PT

PIC32MX250F128D-I/PT

Microchip Technology

IC MCU 32BIT 128KB FLASH 44TQFP

AK4480EF

AK4480EF

AKM Semiconductor Inc.

IC DAC/AUDIO 32BIT 216K 30VSOP

CDRH124NP-100MC

CDRH124NP-100MC

Sumida

FIXED IND 10UH 4.5A 28 MOHM SMD

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

UCLAMP2804L.TCT

UCLAMP2804L.TCT

Semtech

TVS DIODE 2.8V 10V 8SOIC

74HC259D

74HC259D

Toshiba Semiconductor and Storage

IC 8BIT ADDRESSABLE LATCH 16SOIC

FPF2125

FPF2125

ON Semiconductor

IC LOAD SWITCH ADVANCED SOT23

DS3232SN#T&R

DS3232SN#T&R

Maxim Integrated

IC RTC CLK/CALENDAR I2C 20-SOIC

TL431ACLPG

TL431ACLPG

ON Semiconductor

IC VREF SHUNT ADJ TO92-3