RSFJLHMTG
For Reference Only
| Part Number | RSFJLHMTG |
| PNEDA Part # | RSFJLHMTG |
| Description | DIODE GEN PURP 600V 500MA SUBSMA |
| Manufacturer | Taiwan Semiconductor Corporation |
| Unit Price | Request a Quote |
| In Stock | 5,724 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RSFJLHMTG Resources
| Brand | Taiwan Semiconductor Corporation |
| ECAD Module |
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| Mfr. Part Number | RSFJLHMTG |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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RSFJLHMTG Specifications
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | Automotive, AEC-Q101 |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 500mA |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 500mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 250ns |
| Current - Reverse Leakage @ Vr | 5µA @ 600V |
| Capacitance @ Vr, F | 4pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-219AB |
| Supplier Device Package | Sub SMA |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Taiwan Semiconductor Corporation Series Automotive, AEC-Q101 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 4A Voltage - Forward (Vf) (Max) @ If 1.28V @ 4A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 50ns Current - Reverse Leakage @ Vr 10µA @ 400V Capacitance @ Vr, F 65pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer WeEn Semiconductors Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 30A Voltage - Forward (Vf) (Max) @ If 3.3V @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 65ns Current - Reverse Leakage @ Vr 250µA @ 1200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-247-2 Supplier Device Package TO-247-2 Operating Temperature - Junction 175°C (Max) |
