RS3MHM6G
For Reference Only
Part Number | RS3MHM6G |
PNEDA Part # | RS3MHM6G |
Description | DIODE GEN PURP 3A DO214AB |
Manufacturer | Taiwan Semiconductor Corporation |
Unit Price | Request a Quote |
In Stock | 3,924 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 30 - Dec 5 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RS3MHM6G Resources
Brand | Taiwan Semiconductor Corporation |
ECAD Module | |
Mfr. Part Number | RS3MHM6G |
Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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RS3MHM6G Specifications
Manufacturer | Taiwan Semiconductor Corporation |
Series | Automotive, AEC-Q101 |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | - |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 3A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 500ns |
Current - Reverse Leakage @ Vr | 10µA @ 1000V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | DO-214AB, SMC |
Supplier Device Package | DO-214AB (SMC) |
Operating Temperature - Junction | -55°C ~ 150°C |
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Microsemi Manufacturer Microsemi Corporation Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
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