RS3K-E3/9AT
For Reference Only
| Part Number | RS3K-E3/9AT |
| PNEDA Part # | RS3K-E3-9AT |
| Description | DIODE GEN PURP 800V 3A DO214AB |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 5,202 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 30 - Apr 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RS3K-E3/9AT Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | RS3K-E3/9AT |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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RS3K-E3/9AT Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 2.5A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 500ns |
| Current - Reverse Leakage @ Vr | 10µA @ 800V |
| Capacitance @ Vr, F | 34pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AB, SMC |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Micro Commercial Co Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 5µA @ 200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-213AB, MELF (Glass) Supplier Device Package MELF Operating Temperature - Junction - |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 520mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 40V Capacitance @ Vr, F 62pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case SOD-128 Supplier Device Package M-FLAT (2.4x3.8) Operating Temperature - Junction 150°C (Max) |
