RRQ020P03TCR
For Reference Only
| Part Number | RRQ020P03TCR |
| PNEDA Part # | RRQ020P03TCR |
| Description | MOSFET P-CH 30V 2A TSMT6 |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,320 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
RRQ020P03TCR Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | RRQ020P03TCR |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- RRQ020P03TCR Datasheet
- where to find RRQ020P03TCR
- Rohm Semiconductor
- Rohm Semiconductor RRQ020P03TCR
- RRQ020P03TCR PDF Datasheet
- RRQ020P03TCR Stock
- RRQ020P03TCR Pinout
- Datasheet RRQ020P03TCR
- RRQ020P03TCR Supplier
- Rohm Semiconductor Distributor
- RRQ020P03TCR Price
- RRQ020P03TCR Distributor
RRQ020P03TCR Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TSMT6 (SC-95) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 53A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16.5mOhm @ 28A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1696pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 107W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.2Ohm @ 2A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 615pF @ 25V FET Feature - Power Dissipation (Max) 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 200mOhm @ 15A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 25V FET Feature - Power Dissipation (Max) 460W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3 |
Manufacturer STMicroelectronics Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.3mOhm @ 60A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12800pF @ 25V FET Feature - Power Dissipation (Max) 315W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H2Pak-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 39A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 40A, 10V Vgs(th) (Max) @ Id 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs 59nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5150pF @ 13V FET Feature - Power Dissipation (Max) 3.6W (Ta), 78W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ MX Package / Case DirectFET™ Isometric MX |
