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RN4987FE,LF(CT

RN4987FE,LF(CT

For Reference Only

Part Number RN4987FE,LF(CT
PNEDA Part # RN4987FE-LF-CT
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 244,248
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN4987FE Resources

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RN4987FE Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz, 200MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

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