RN2910FE,LF(CT
For Reference Only
| Part Number | RN2910FE,LF(CT |
| PNEDA Part # | RN2910FE-LF-CT |
| Description | TRANS 2PNP PREBIAS 0.1W ES6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 31,836 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
RN2910FE Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | RN2910FE,LF(CT |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- RN2910FE,LF(CT Datasheet
- where to find RN2910FE,LF(CT
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage RN2910FE,LF(CT
- RN2910FE,LF(CT PDF Datasheet
- RN2910FE,LF(CT Stock
- RN2910FE,LF(CT Pinout
- Datasheet RN2910FE,LF(CT
- RN2910FE,LF(CT Supplier
- Toshiba Semiconductor and Storage Distributor
- RN2910FE,LF(CT Price
- RN2910FE,LF(CT Distributor
RN2910FE Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 200MHz |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
The Products You May Be Interested In
|
Manufacturer Panasonic Electronic Components Series - Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA, 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 47kOhms, 4.7kOhms Resistor - Emitter Base (R2) 47kOhms, 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V / 50 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA / 250mV @ 5mA, 100mA Current - Collector Cutoff (Max) 500nA, 1µA Frequency - Transition - Power - Max 300mW Mounting Type Surface Mount Package / Case SOT-23-6 Supplier Device Package Mini6-G4-B |
Manufacturer ON Semiconductor Series - Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10kOhms Resistor - Emitter Base (R2) 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition - Power - Max 250mW Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-88/SC70-6/SOT-363 |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101 Transistor Type 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 22kOhms Resistor - Emitter Base (R2) 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) 1µA Frequency - Transition 230MHz Power - Max 480mW Mounting Type Surface Mount Package / Case 6-XFDFN Exposed Pad Supplier Device Package DFN1412-6 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 22kOhms Resistor - Emitter Base (R2) 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package US6 |
Manufacturer Infineon Technologies Series - Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 22kOhms Resistor - Emitter Base (R2) 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) - Frequency - Transition 130MHz Power - Max 250mW Mounting Type Surface Mount Package / Case 6-VSSOP, SC-88, SOT-363 Supplier Device Package PG-SOT363-6 |
