RN2712JE(TE85L,F)
For Reference Only
| Part Number | RN2712JE(TE85L,F) |
| PNEDA Part # | RN2712JE-TE85L-F |
| Description | TRANS 2PNP PREBIAS 0.1W ESV |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 33,420 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RN2712JE(TE85L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | RN2712JE(TE85L,F) |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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RN2712JE(TE85L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 200MHz |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-553 |
| Supplier Device Package | ESV |
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