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RN2118(T5L,F,T)

RN2118(T5L,F,T)

For Reference Only

Part Number RN2118(T5L,F,T)
PNEDA Part # RN2118-T5L-F-T
Description TRANS PREBIAS PNP 0.1W SSM
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,624
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN2118(T5L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberRN2118(T5L,F,T)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
RN2118(T5L, RN2118(T5L Datasheet (Total Pages: 8, Size: 214.77 KB)
PDFRN2118(T5L Datasheet Cover
RN2118(T5L Datasheet Page 2 RN2118(T5L Datasheet Page 3 RN2118(T5L Datasheet Page 4 RN2118(T5L Datasheet Page 5 RN2118(T5L Datasheet Page 6 RN2118(T5L Datasheet Page 7 RN2118(T5L Datasheet Page 8

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RN2118(T5L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition200MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageSSM

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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