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RN1964TE85LF

RN1964TE85LF

For Reference Only

Part Number RN1964TE85LF
PNEDA Part # RN1964TE85LF
Description TRANS 2NPN PREBIAS 0.2W US6
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 7,956
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1964TE85LF Resources

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RN1964TE85LF Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Voltage - Collector Emitter Breakdown (Max)

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