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RN1904FE,LF(CT

RN1904FE,LF(CT

For Reference Only

Part Number RN1904FE,LF(CT
PNEDA Part # RN1904FE-LF-CT
Description TRANS 2NPN PREBIAS 0.1W ES6
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 28,506
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 6 - Apr 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1904FE Resources

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RN1904FE Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

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Voltage - Collector Emitter Breakdown (Max)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Supplier Device Package

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