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RN1706JE(TE85L,F)

RN1706JE(TE85L,F)

For Reference Only

Part Number RN1706JE(TE85L,F)
PNEDA Part # RN1706JE-TE85L-F
Description TRANS 2NPN PREBIAS 0.1W ESV
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 7,668
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1706JE(TE85L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberRN1706JE(TE85L,F)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased

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RN1706JE(TE85L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor Type2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSOT-553
Supplier Device PackageESV

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