RN1111CT(TPL3)
For Reference Only
| Part Number | RN1111CT(TPL3) |
| PNEDA Part # | RN1111CT-TPL3 |
| Description | TRANS PREBIAS NPN 0.05W CST3 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 5,904 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RN1111CT(TPL3) Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | RN1111CT(TPL3) |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Datasheet |
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RN1111CT(TPL3) Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | - |
| Power - Max | 50mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-101, SOT-883 |
| Supplier Device Package | CST3 |
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Manufacturer Infineon Technologies Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 70mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 47 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 250mW Mounting Type Surface Mount Package / Case SC-101, SOT-883 Supplier Device Package PG-TSLP-3-4 |
Manufacturer Rohm Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 30V Resistor - Base (R1) 1 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 260MHz Power - Max 150mW Mounting Type Surface Mount Package / Case SC-75, SOT-416 Supplier Device Package EMT3 |
