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RN1109CT(TPL3)

RN1109CT(TPL3)

For Reference Only

Part Number RN1109CT(TPL3)
PNEDA Part # RN1109CT-TPL3
Description TRANS PREBIAS NPN 0.05W CST3
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 8,766
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1109CT(TPL3) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberRN1109CT(TPL3)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
RN1109CT(TPL3), RN1109CT(TPL3) Datasheet (Total Pages: 6, Size: 170.54 KB)
PDFRN1109CT(TPL3) Datasheet Cover
RN1109CT(TPL3) Datasheet Page 2 RN1109CT(TPL3) Datasheet Page 3 RN1109CT(TPL3) Datasheet Page 4 RN1109CT(TPL3) Datasheet Page 5 RN1109CT(TPL3) Datasheet Page 6

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RN1109CT(TPL3) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)20V
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max50mW
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageCST3

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