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RN1109(T5L,F,T)

RN1109(T5L,F,T)

For Reference Only

Part Number RN1109(T5L,F,T)
PNEDA Part # RN1109-T5L-F-T
Description TRANS PREBIAS NPN 0.1W SSM
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 8,388
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 19 - Apr 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1109(T5L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberRN1109(T5L,F,T)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
RN1109(T5L, RN1109(T5L Datasheet (Total Pages: 6, Size: 340.56 KB)
PDFRN1109(T5L Datasheet Cover
RN1109(T5L Datasheet Page 2 RN1109(T5L Datasheet Page 3 RN1109(T5L Datasheet Page 4 RN1109(T5L Datasheet Page 5 RN1109(T5L Datasheet Page 6

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RN1109(T5L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageSSM

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