Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RN1101ACT(TPL3)

RN1101ACT(TPL3)

For Reference Only

Part Number RN1101ACT(TPL3)
PNEDA Part # RN1101ACT-TPL3
Description TRANS PREBIAS NPN 0.1W CST3
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,048
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1101ACT(TPL3) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberRN1101ACT(TPL3)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
RN1101ACT(TPL3), RN1101ACT(TPL3) Datasheet (Total Pages: 8, Size: 562.02 KB)
PDFRN1101ACT(TPL3) Datasheet Cover
RN1101ACT(TPL3) Datasheet Page 2 RN1101ACT(TPL3) Datasheet Page 3 RN1101ACT(TPL3) Datasheet Page 4 RN1101ACT(TPL3) Datasheet Page 5 RN1101ACT(TPL3) Datasheet Page 6 RN1101ACT(TPL3) Datasheet Page 7 RN1101ACT(TPL3) Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RN1101ACT(TPL3) Datasheet
  • where to find RN1101ACT(TPL3)
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage RN1101ACT(TPL3)
  • RN1101ACT(TPL3) PDF Datasheet
  • RN1101ACT(TPL3) Stock

  • RN1101ACT(TPL3) Pinout
  • Datasheet RN1101ACT(TPL3)
  • RN1101ACT(TPL3) Supplier

  • Toshiba Semiconductor and Storage Distributor
  • RN1101ACT(TPL3) Price
  • RN1101ACT(TPL3) Distributor

RN1101ACT(TPL3) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)80mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageCST3

The Products You May Be Interested In

DDTC122TE-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

220 Ohms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

200MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-523

Supplier Device Package

SOT-523

DDTC115TE-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

100 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 100µA, 1mA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

250MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-523

Supplier Device Package

SOT-523

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 20mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SMT3; MPAK

DTA144TET1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-75, SOT-416

Supplier Device Package

SC-75

RN1405,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

S-Mini

Recently Sold

MAX14757EUE+

MAX14757EUE+

Maxim Integrated

IC SWITCH QUAD SPST 16TSSOP

AT25M01-SSHM-T

AT25M01-SSHM-T

Microchip Technology

IC EEPROM 1M SPI 20MHZ 8SOIC

NE3509M04-A

NE3509M04-A

CEL

FET RF 4V 2GHZ 4-SMINI

TAJB475K016RNJ

TAJB475K016RNJ

CAP TANT 4.7UF 10% 16V 1411

NVMFS5A160PLZT1G

NVMFS5A160PLZT1G

ON Semiconductor

-60V7.7MOHMSINGLE

WSL20108L000FEA

WSL20108L000FEA

Vishay Dale

RES 0.008 OHM 1% 1/2W 2010

NOIP2SE1300A-QDI

NOIP2SE1300A-QDI

ON Semiconductor

IC IMAGE SENSOR 1.3MP 48LCC

ESD3V3D5B-TP

ESD3V3D5B-TP

Micro Commercial Co

TVS DIODE 3.3V 12V SOD523

MC68HC908GP32CFB

MC68HC908GP32CFB

NXP

IC MCU 8BIT 32KB FLASH 44QFP

10MQ060NTR

10MQ060NTR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2.1A SMA

MBR140SFT1G

MBR140SFT1G

ON Semiconductor

DIODE SCHOTTKY 40V 1A SOD123L

P6KE150A

P6KE150A

Taiwan Semiconductor Corporation

TVS DIODE 128V 207V DO15