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RJL5012DPE-00#J3

RJL5012DPE-00#J3

For Reference Only

Part Number RJL5012DPE-00#J3
PNEDA Part # RJL5012DPE-00-J3
Description MOSFET N-CH 500V 12A LDPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,490
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJL5012DPE-00#J3 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJL5012DPE-00#J3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJL5012DPE-00#J3, RJL5012DPE-00#J3 Datasheet (Total Pages: 7, Size: 80.18 KB)
PDFRJL5012DPE-00#J3 Datasheet Cover
RJL5012DPE-00#J3 Datasheet Page 2 RJL5012DPE-00#J3 Datasheet Page 3 RJL5012DPE-00#J3 Datasheet Page 4 RJL5012DPE-00#J3 Datasheet Page 5 RJL5012DPE-00#J3 Datasheet Page 6 RJL5012DPE-00#J3 Datasheet Page 7

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RJL5012DPE-00#J3 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs700mOhm @ 6A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs27.8nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1050pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-LDPAK
Package / CaseSC-83

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