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RJK60S7DPK-M0#T0

RJK60S7DPK-M0#T0

For Reference Only

Part Number RJK60S7DPK-M0#T0
PNEDA Part # RJK60S7DPK-M0-T0
Description MOSFET N-CH 600V 30A TO-3PSG
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,328
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK60S7DPK-M0#T0 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK60S7DPK-M0#T0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK60S7DPK-M0#T0, RJK60S7DPK-M0#T0 Datasheet (Total Pages: 8, Size: 193.95 KB)
PDFRJK60S7DPK-M0#T0 Datasheet Cover
RJK60S7DPK-M0#T0 Datasheet Page 2 RJK60S7DPK-M0#T0 Datasheet Page 3 RJK60S7DPK-M0#T0 Datasheet Page 4 RJK60S7DPK-M0#T0 Datasheet Page 5 RJK60S7DPK-M0#T0 Datasheet Page 6 RJK60S7DPK-M0#T0 Datasheet Page 7 RJK60S7DPK-M0#T0 Datasheet Page 8

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RJK60S7DPK-M0#T0 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)+30V, -20V
Input Capacitance (Ciss) (Max) @ Vds2300pF @ 25V
FET FeatureSuper Junction
Power Dissipation (Max)227.2W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PSG
Package / CaseTO-3P-3, SC-65-3

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