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RJK6032DPH-E0#T2

RJK6032DPH-E0#T2

For Reference Only

Part Number RJK6032DPH-E0#T2
PNEDA Part # RJK6032DPH-E0-T2
Description MOSFET N-CH 600V 3A TO251
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 3,762
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK6032DPH-E0#T2 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK6032DPH-E0#T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK6032DPH-E0#T2, RJK6032DPH-E0#T2 Datasheet (Total Pages: 7, Size: 93.87 KB)
PDFRJK6032DPH-E0#T2 Datasheet Cover
RJK6032DPH-E0#T2 Datasheet Page 2 RJK6032DPH-E0#T2 Datasheet Page 3 RJK6032DPH-E0#T2 Datasheet Page 4 RJK6032DPH-E0#T2 Datasheet Page 5 RJK6032DPH-E0#T2 Datasheet Page 6 RJK6032DPH-E0#T2 Datasheet Page 7

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RJK6032DPH-E0#T2 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds285pF @ 25V
FET Feature-
Power Dissipation (Max)40.3W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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