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RJK6018DPK-00#T0

RJK6018DPK-00#T0

For Reference Only

Part Number RJK6018DPK-00#T0
PNEDA Part # RJK6018DPK-00-T0
Description MOSFET N-CH 600V 30A TO3P
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,418
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK6018DPK-00#T0 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK6018DPK-00#T0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK6018DPK-00#T0, RJK6018DPK-00#T0 Datasheet (Total Pages: 7, Size: 79.57 KB)
PDFRJK6018DPK-00#T0 Datasheet Cover
RJK6018DPK-00#T0 Datasheet Page 2 RJK6018DPK-00#T0 Datasheet Page 3 RJK6018DPK-00#T0 Datasheet Page 4 RJK6018DPK-00#T0 Datasheet Page 5 RJK6018DPK-00#T0 Datasheet Page 6 RJK6018DPK-00#T0 Datasheet Page 7

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RJK6018DPK-00#T0 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs235mOhm @ 15A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs92nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4100pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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