Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RJK6014DPP-E0#T2

RJK6014DPP-E0#T2

For Reference Only

Part Number RJK6014DPP-E0#T2
PNEDA Part # RJK6014DPP-E0-T2
Description MOSFET N-CH 600V 16A TO220
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 7,398
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK6014DPP-E0#T2 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK6014DPP-E0#T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK6014DPP-E0#T2, RJK6014DPP-E0#T2 Datasheet (Total Pages: 7, Size: 84.46 KB)
PDFRJK6014DPP-E0#T2 Datasheet Cover
RJK6014DPP-E0#T2 Datasheet Page 2 RJK6014DPP-E0#T2 Datasheet Page 3 RJK6014DPP-E0#T2 Datasheet Page 4 RJK6014DPP-E0#T2 Datasheet Page 5 RJK6014DPP-E0#T2 Datasheet Page 6 RJK6014DPP-E0#T2 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RJK6014DPP-E0#T2 Datasheet
  • where to find RJK6014DPP-E0#T2
  • Renesas Electronics America

  • Renesas Electronics America RJK6014DPP-E0#T2
  • RJK6014DPP-E0#T2 PDF Datasheet
  • RJK6014DPP-E0#T2 Stock

  • RJK6014DPP-E0#T2 Pinout
  • Datasheet RJK6014DPP-E0#T2
  • RJK6014DPP-E0#T2 Supplier

  • Renesas Electronics America Distributor
  • RJK6014DPP-E0#T2 Price
  • RJK6014DPP-E0#T2 Distributor

RJK6014DPP-E0#T2 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs575mOhm @ 8A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1800pF @ 25V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

TPH2R506PL,L1Q

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIX-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.4mOhm @ 30A, 4.5V

Vgs(th) (Max) @ Id

2.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5435pF @ 30V

FET Feature

-

Power Dissipation (Max)

132W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

DMG2302UKQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

90mOhm @ 3.6A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.8nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

130pF @ 10V

FET Feature

-

Power Dissipation (Max)

660mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

2N7002 TR

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

115mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

7.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

40V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Power Dissipation (Max)

350mW (Ta)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

TK6A65D(STA4,Q,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

π-MOSVII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.11Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1050pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

BS170RLRA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

60pF @ 10V

FET Feature

-

Power Dissipation (Max)

350mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Recently Sold

BNX026H01L

BNX026H01L

Murata

FILTER LC 10UF SMD

IHLP2525CZERR33M01

IHLP2525CZERR33M01

Vishay Dale

FIXED IND 330NH 20A 3.9 MOHM SMD

302R29W102KV4E

302R29W102KV4E

Johanson Dielectrics

CAP CER 1000PF 3KV X7R 1808

TR2/TCP1.25-R

TR2/TCP1.25-R

Eaton - Electronics Division

FUSE BRD MNT 1.25A 250VAC 2SMD

MAX3002EUP+

MAX3002EUP+

Maxim Integrated

IC TRNSLTR BIDIRECTIONAL 20TSSOP

HD64F3664FPV

HD64F3664FPV

Renesas Electronics America

IC MCU 16BIT 32KB FLASH 64LQFP

STPS0560Z

STPS0560Z

STMicroelectronics

DIODE SCHOTTKY 60V 500MA SOD123

2N6433

2N6433

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

SP3232EEN-L

SP3232EEN-L

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

PIC16F1829T-I/SS

PIC16F1829T-I/SS

Microchip Technology

IC MCU 8BIT 14KB FLASH 20SSOP

2843010402

2843010402

Fair-Rite Products

FERRITE CORE MULTI-APERTURE

NC7WZ17P6X

NC7WZ17P6X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6