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RJK2555DPA-00#J0

RJK2555DPA-00#J0

For Reference Only

Part Number RJK2555DPA-00#J0
PNEDA Part # RJK2555DPA-00-J0
Description MOSFET N-CH 250V 17A TO3P
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 3,600
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK2555DPA-00#J0 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK2555DPA-00#J0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK2555DPA-00#J0, RJK2555DPA-00#J0 Datasheet (Total Pages: 9, Size: 115.13 KB)
PDFRJK2555DPA-00#J0 Datasheet Cover
RJK2555DPA-00#J0 Datasheet Page 2 RJK2555DPA-00#J0 Datasheet Page 3 RJK2555DPA-00#J0 Datasheet Page 4 RJK2555DPA-00#J0 Datasheet Page 5 RJK2555DPA-00#J0 Datasheet Page 6 RJK2555DPA-00#J0 Datasheet Page 7 RJK2555DPA-00#J0 Datasheet Page 8 RJK2555DPA-00#J0 Datasheet Page 9

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RJK2555DPA-00#J0 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs104mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2400pF @ 25V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-WPAK
Package / Case8-PowerWDFN

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