Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RJK2508DPK-00#T0

RJK2508DPK-00#T0

For Reference Only

Part Number RJK2508DPK-00#T0
PNEDA Part # RJK2508DPK-00-T0
Description MOSFET N-CH 250V 50A TO3P
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,184
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK2508DPK-00#T0 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK2508DPK-00#T0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK2508DPK-00#T0, RJK2508DPK-00#T0 Datasheet (Total Pages: 7, Size: 87.49 KB)
PDFRJK2508DPK-00#T0 Datasheet Cover
RJK2508DPK-00#T0 Datasheet Page 2 RJK2508DPK-00#T0 Datasheet Page 3 RJK2508DPK-00#T0 Datasheet Page 4 RJK2508DPK-00#T0 Datasheet Page 5 RJK2508DPK-00#T0 Datasheet Page 6 RJK2508DPK-00#T0 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RJK2508DPK-00#T0 Datasheet
  • where to find RJK2508DPK-00#T0
  • Renesas Electronics America

  • Renesas Electronics America RJK2508DPK-00#T0
  • RJK2508DPK-00#T0 PDF Datasheet
  • RJK2508DPK-00#T0 Stock

  • RJK2508DPK-00#T0 Pinout
  • Datasheet RJK2508DPK-00#T0
  • RJK2508DPK-00#T0 Supplier

  • Renesas Electronics America Distributor
  • RJK2508DPK-00#T0 Price
  • RJK2508DPK-00#T0 Distributor

RJK2508DPK-00#T0 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs64mOhm @ 25A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

The Products You May Be Interested In

APT20M38BVFRG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS V®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

67A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

38mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

225nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6120pF @ 25V

FET Feature

-

Power Dissipation (Max)

370W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 [B]

Package / Case

TO-247-3

IPA040N06NXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

69A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 69A, 10V

Vgs(th) (Max) @ Id

3.3V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3375pF @ 30V

FET Feature

-

Power Dissipation (Max)

36W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-FP

Package / Case

TO-220-3 Full Pack

STP40NF12

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

32mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1880pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

AOT270AL

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

21.5A (Ta), 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

206nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10830pF @ 37.5V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 500W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

IPC60R950C6UNSAWNX6SA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

SI4836DY-T1-E3

SI4836DY-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 17A 8-SOIC

DG641DY

DG641DY

Vishay Siliconix

IC VIDEO SWITCH SPST 16SOIC

CD143A-SR70

CD143A-SR70

Bourns

TVS DIODE 7V SOT143

BAV70LT1G

BAV70LT1G

ON Semiconductor

DIODE ARRAY GP 100V 200MA SOT23

SP3232EEN-L/TR

SP3232EEN-L/TR

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

IR2214SSTRPBF

IR2214SSTRPBF

Infineon Technologies

IC DVR HALF BRIDGE IC 24SSOP

S25FL032P0XMFI001

S25FL032P0XMFI001

Cypress Semiconductor

IC FLASH 32M SPI 104MHZ 16SOIC

A42MX09-PQ100

A42MX09-PQ100

Microsemi

IC FPGA 83 I/O 100QFP

AD835ARZ

AD835ARZ

Analog Devices

IC MULTIPLIER 4-QUADRANT 8-SOIC

LM1458M

LM1458M

ON Semiconductor

IC OPAMP GP 2 CIRCUIT 8SOIC

LTST-C191GKT

LTST-C191GKT

Lite-On Inc.

LED GREEN CLEAR CHIP SMD

LT1963AEFE-3.3#TRPBF

LT1963AEFE-3.3#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A 16TSSOP