Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RJK1555DPA-WS#J0

RJK1555DPA-WS#J0

For Reference Only

Part Number RJK1555DPA-WS#J0
PNEDA Part # RJK1555DPA-WS-J0
Description MOSFET N-CH W-PAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 8,802
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK1555DPA-WS#J0 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK1555DPA-WS#J0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RJK1555DPA-WS#J0 Datasheet
  • where to find RJK1555DPA-WS#J0
  • Renesas Electronics America

  • Renesas Electronics America RJK1555DPA-WS#J0
  • RJK1555DPA-WS#J0 PDF Datasheet
  • RJK1555DPA-WS#J0 Stock

  • RJK1555DPA-WS#J0 Pinout
  • Datasheet RJK1555DPA-WS#J0
  • RJK1555DPA-WS#J0 Supplier

  • Renesas Electronics America Distributor
  • RJK1555DPA-WS#J0 Price
  • RJK1555DPA-WS#J0 Distributor

RJK1555DPA-WS#J0 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs48mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2400pF @ 25V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package8-WPAK
Package / Case8-PowerWDFN

The Products You May Be Interested In

SI4411DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

BUK9880-55/CUF

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

7.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

80mOhm @ 5A, 5V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 25V

FET Feature

-

Power Dissipation (Max)

8.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-73

Package / Case

TO-261-4, TO-261AA

BSC039N06NSATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

19A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

3.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.8V @ 36µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-6

Package / Case

8-PowerTDFN

RJK6011DJE-00#Z0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

52Ohm @ 50mA, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

3.7nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

25pF @ 25V

FET Feature

-

Power Dissipation (Max)

900mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92MOD

Package / Case

TO-226-3, TO-92-3 Long Body (Formed Leads)

SSM3J327R,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

93mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

4.6nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

290pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23F

Package / Case

SOT-23-3 Flat Leads

Recently Sold

WSL1206R0500FEA

WSL1206R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1/4W 1206

ZTB800J

ZTB800J

ECS

CER RES 800.0000KHZ T/H

LM211DT

LM211DT

STMicroelectronics

IC VOLTAGE COMPARATOR 8-SOIC

TDA04H0SB1

TDA04H0SB1

C&K

SWITCH SLIDE DIP SPST 25MA 24V

PSMN4R5-30YLC,115

PSMN4R5-30YLC,115

Nexperia

MOSFET N-CH 30V 84A LFPAK

74HC132D,653

74HC132D,653

Nexperia

IC GATE NAND SCHMITT 4CH 14SO

UUX1E470MCL1GS

UUX1E470MCL1GS

Nichicon

CAP ALUM 47UF 20% 25V SMD

LTST-C190KFKT

LTST-C190KFKT

Lite-On Inc.

LED ORANGE CLEAR CHIP SMD

2920L075DR

2920L075DR

Littelfuse

PTC RESET FUSE 30V 750MA 2920

1N5614

1N5614

Semtech

DIODE GEN PURP 200V 2A AXIAL

NTHD4102PT1G

NTHD4102PT1G

ON Semiconductor

MOSFET 2P-CH 20V 2.9A CHIPFET

3224W-1-502E

3224W-1-502E

Bourns

TRIMMER 5K OHM 0.25W J LEAD TOP