RJK0855DPB-00#J5
For Reference Only
Part Number | RJK0855DPB-00#J5 |
PNEDA Part # | RJK0855DPB-00-J5 |
Description | MOSFET N-CH 80V 30A LFPAK |
Manufacturer | Renesas Electronics America |
Unit Price | Request a Quote |
In Stock | 4,374 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
RJK0855DPB-00#J5 Resources
Brand | Renesas Electronics America |
ECAD Module | |
Mfr. Part Number | RJK0855DPB-00#J5 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- RJK0855DPB-00#J5 Datasheet
- where to find RJK0855DPB-00#J5
- Renesas Electronics America
- Renesas Electronics America RJK0855DPB-00#J5
- RJK0855DPB-00#J5 PDF Datasheet
- RJK0855DPB-00#J5 Stock
- RJK0855DPB-00#J5 Pinout
- Datasheet RJK0855DPB-00#J5
- RJK0855DPB-00#J5 Supplier
- Renesas Electronics America Distributor
- RJK0855DPB-00#J5 Price
- RJK0855DPB-00#J5 Distributor
RJK0855DPB-00#J5 Specifications
Manufacturer | Renesas Electronics America |
Series | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 11mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2550pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 60W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | LFPAK |
Package / Case | SC-100, SOT-669 |
The Products You May Be Interested In
STMicroelectronics Manufacturer STMicroelectronics Series MDmesh™ K5 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 8A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 100V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
ON Semiconductor Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 15A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2075pF @ 15V FET Feature - Power Dissipation (Max) 2.3W (Ta), 41W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Power33 Package / Case 8-PowerTDFN |
Alpha & Omega Semiconductor Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 17A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.9mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1187pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta), 50W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251B Package / Case TO-251-3 Stub Leads, IPak |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5370pF @ 15V FET Feature - Power Dissipation (Max) 3W (Ta), 6W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Alpha & Omega Semiconductor Manufacturer Alpha & Omega Semiconductor Inc. Series aMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 199mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19.8nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1038pF @ 100V FET Feature - Power Dissipation (Max) 266W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |