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RJK03C1DPB-00#J5

RJK03C1DPB-00#J5

For Reference Only

Part Number RJK03C1DPB-00#J5
PNEDA Part # RJK03C1DPB-00-J5
Description MOSFET N-CH 30V 60A LFPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 8,892
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK03C1DPB-00#J5 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK03C1DPB-00#J5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK03C1DPB-00#J5, RJK03C1DPB-00#J5 Datasheet (Total Pages: 9, Size: 271.54 KB)
PDFRJK03C1DPB-00#J5 Datasheet Cover
RJK03C1DPB-00#J5 Datasheet Page 2 RJK03C1DPB-00#J5 Datasheet Page 3 RJK03C1DPB-00#J5 Datasheet Page 4 RJK03C1DPB-00#J5 Datasheet Page 5 RJK03C1DPB-00#J5 Datasheet Page 6 RJK03C1DPB-00#J5 Datasheet Page 7 RJK03C1DPB-00#J5 Datasheet Page 8 RJK03C1DPB-00#J5 Datasheet Page 9

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RJK03C1DPB-00#J5 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs42nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6000pF @ 10V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)65W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK
Package / CaseSC-100, SOT-669

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