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RJK0332DPB-01#J0

RJK0332DPB-01#J0

For Reference Only

Part Number RJK0332DPB-01#J0
PNEDA Part # RJK0332DPB-01-J0
Description MOSFET N-CH 30V 35A LFPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 2,790
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK0332DPB-01#J0 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK0332DPB-01#J0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK0332DPB-01#J0, RJK0332DPB-01#J0 Datasheet (Total Pages: 7, Size: 91.96 KB)
PDFRJK0332DPB-01#J0 Datasheet Cover
RJK0332DPB-01#J0 Datasheet Page 2 RJK0332DPB-01#J0 Datasheet Page 3 RJK0332DPB-01#J0 Datasheet Page 4 RJK0332DPB-01#J0 Datasheet Page 5 RJK0332DPB-01#J0 Datasheet Page 6 RJK0332DPB-01#J0 Datasheet Page 7

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RJK0332DPB-01#J0 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.7mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs14nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2180pF @ 10V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK
Package / CaseSC-100, SOT-669

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