RGTH60TS65GC11
For Reference Only
| Part Number | RGTH60TS65GC11 |
| PNEDA Part # | RGTH60TS65GC11 |
| Description | IGBT 650V 58A 197W TO-247N |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,084 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RGTH60TS65GC11 Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | RGTH60TS65GC11 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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RGTH60TS65GC11 Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 58A |
| Current - Collector Pulsed (Icm) | 120A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Power - Max | 197W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 58nC |
| Td (on/off) @ 25°C | 27ns/105ns |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247N |
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 320A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A Power - Max 625W Switching Energy 400µJ (on), 310µJ (off) Input Type Standard Gate Charge 140nC Td (on/off) @ 25°C 18ns/70ns Test Condition 390V, 40A, 3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 13A Current - Collector Pulsed (Icm) 52A Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 6.5A Power - Max 45W Switching Energy 85µJ (on), 95µJ (off) Input Type Standard Gate Charge 25nC Td (on/off) @ 25°C 20ns/70ns Test Condition 300V, 6.5A, 50Ohm, 15V Reverse Recovery Time (trr) 55ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220F |
Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 30A Current - Collector Pulsed (Icm) 45A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 15A Power - Max 220W Switching Energy - Input Type Standard Gate Charge 100nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 575ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
Manufacturer ON Semiconductor Series - IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 40A Power - Max 290W Switching Energy 1.13mJ (on), 310µJ (off) Input Type Standard Gate Charge 120nC Td (on/off) @ 25°C 25ns/115ns Test Condition 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr) 45ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
