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RGT8NS65DGC9

RGT8NS65DGC9

For Reference Only

Part Number RGT8NS65DGC9
PNEDA Part # RGT8NS65DGC9
Description IGBT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 13,104
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RGT8NS65DGC9 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRGT8NS65DGC9
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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RGT8NS65DGC9 Specifications

ManufacturerRohm Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)8A
Current - Collector Pulsed (Icm)12A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 4A
Power - Max65W
Switching Energy-
Input TypeStandard
Gate Charge13.5nC
Td (on/off) @ 25°C17ns/69ns
Test Condition400V, 4A, 50Ohm, 15V
Reverse Recovery Time (trr)40ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 10A

Power - Max

100W

Switching Energy

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Input Type

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Gate Charge

52nC

Td (on/off) @ 25°C

100ns/550ns

Test Condition

800V, 10A, 150Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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STMicroelectronics

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Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

6A

Current - Collector Pulsed (Icm)

21A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 3A

Power - Max

20W

Switching Energy

20µJ (on), 68µJ (off)

Input Type

Standard

Gate Charge

13.6nC

Td (on/off) @ 25°C

12ns/76ns

Test Condition

390V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr)

21ns

Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 75A

Power - Max

536W

Switching Energy

1.57mJ (on), 3.2mJ (off)

Input Type

Standard

Gate Charge

436nC

Td (on/off) @ 25°C

120ns/275ns

Test Condition

400V, 75A, 23Ohm, 15V

Reverse Recovery Time (trr)

59ns

Operating Temperature

-40°C ~ 175°C (TJ)

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Package / Case

TO-247-4

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

125W

Switching Energy

55µJ (on), 60µJ (off)

Input Type

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Gate Charge

37nC

Td (on/off) @ 25°C

11ns/100ns

Test Condition

390V, 7A, 25Ohm, 15V

Reverse Recovery Time (trr)

34ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

170A

Current - Collector Pulsed (Icm)

360A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

2.8mJ (on), 1mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

27ns/93ns

Test Condition

400V, 60A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

TO-247 (IXYH)

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