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RGT80TS65DGC11

RGT80TS65DGC11

For Reference Only

Part Number RGT80TS65DGC11
PNEDA Part # RGT80TS65DGC11
Description IGBT 650V 70A 234W TO-247N
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 8,376
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RGT80TS65DGC11 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRGT80TS65DGC11
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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RGT80TS65DGC11 Specifications

ManufacturerRohm Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)70A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 40A
Power - Max234W
Switching Energy-
Input TypeStandard
Gate Charge79nC
Td (on/off) @ 25°C34ns/119ns
Test Condition400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)58ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247N

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Operating Temperature

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Infineon Technologies

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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