RGP10M-5010E3/73
For Reference Only
| Part Number | RGP10M-5010E3/73 |
| PNEDA Part # | RGP10M-5010E3-73 |
| Description | DIODE GEN PURPOSE DO-204AL |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 5,544 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RGP10M-5010E3/73 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | RGP10M-5010E3/73 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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RGP10M-5010E3/73 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | * |
| Diode Type | - |
| Voltage - DC Reverse (Vr) (Max) | - |
| Current - Average Rectified (Io) | - |
| Voltage - Forward (Vf) (Max) @ If | - |
| Speed | - |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | - |
| Capacitance @ Vr, F | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Operating Temperature - Junction | - |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 700mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 60V Capacitance @ Vr, F 80pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-213AB, MELF Supplier Device Package GL41 (DO-213AB) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Diodes Incorporated Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 500mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 40V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-204AL, DO-41, Axial Supplier Device Package DO-41 Operating Temperature - Junction -65°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 400V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case SOD-128 Supplier Device Package M-FLAT (2.4x3.8) Operating Temperature - Junction -40°C ~ 150°C |
