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RGP10DEHE3/53

RGP10DEHE3/53

For Reference Only

Part Number RGP10DEHE3/53
PNEDA Part # RGP10DEHE3-53
Description DIODE GEN PURP 200V 1A DO204AL
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 7,686
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RGP10DEHE3/53 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberRGP10DEHE3/53
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
RGP10DEHE3/53, RGP10DEHE3/53 Datasheet (Total Pages: 4, Size: 74.2 KB)
PDFRGP10M-M3/54 Datasheet Cover
RGP10M-M3/54 Datasheet Page 2 RGP10M-M3/54 Datasheet Page 3 RGP10M-M3/54 Datasheet Page 4

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RGP10DEHE3/53 Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.3V @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)150ns
Current - Reverse Leakage @ Vr5µA @ 200V
Capacitance @ Vr, F15pF @ 4V, 1MHz
Mounting TypeThrough Hole
Package / CaseDO-204AL, DO-41, Axial
Supplier Device PackageDO-204AL (DO-41)
Operating Temperature - Junction-65°C ~ 175°C

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Voltage - DC Reverse (Vr) (Max)

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Current - Average Rectified (Io)

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Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

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Current - Reverse Leakage @ Vr

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Capacitance @ Vr, F

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Current - Reverse Leakage @ Vr

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Package / Case

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Operating Temperature - Junction

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