RGF1MHE3/67A
For Reference Only
| Part Number | RGF1MHE3/67A |
| PNEDA Part # | RGF1MHE3-67A |
| Description | DIODE GEN PURP 1KV 1A DO214BA |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 6,030 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 17 - Apr 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RGF1MHE3/67A Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | RGF1MHE3/67A |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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RGF1MHE3/67A Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | SUPERECTIFIER® |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 500ns |
| Current - Reverse Leakage @ Vr | 5µA @ 1000V |
| Capacitance @ Vr, F | 8.5pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214BA |
| Supplier Device Package | DO-214BA (GF1) |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 90V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 900mV @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 2µA @ 90V Capacitance @ Vr, F 140pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Cree/Wolfspeed Series Z-Rec® Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 1.8V @ 2A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 50µA @ 1200V Capacitance @ Vr, F 167pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252-2 Operating Temperature - Junction -55°C ~ 175°C |
