RFVS8TJ6SGC9
For Reference Only
| Part Number | RFVS8TJ6SGC9 |
| PNEDA Part # | RFVS8TJ6SGC9 |
| Description | DIODE GEN PURP 600V 8A TO220ACFP |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 16,296 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RFVS8TJ6SGC9 Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | RFVS8TJ6SGC9 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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RFVS8TJ6SGC9 Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 3V @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 40ns |
| Current - Reverse Leakage @ Vr | 10µA @ 600V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 Full Pack |
| Supplier Device Package | TO-220ACFP |
| Operating Temperature - Junction | 150°C (Max) |
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Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 5A (DC) Voltage - Forward (Vf) (Max) @ If 1.8V @ 5A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 830µA @ 650V Capacitance @ Vr, F 160pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package PG-TO263-2 Operating Temperature - Junction -55°C ~ 175°C |
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