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RCD051N20TL

RCD051N20TL

For Reference Only

Part Number RCD051N20TL
PNEDA Part # RCD051N20TL
Description MOSFET N-CH 200V 5A CPT3
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 3,526
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RCD051N20TL Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRCD051N20TL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RCD051N20TL, RCD051N20TL Datasheet (Total Pages: 14, Size: 787.24 KB)
PDFRCD051N20TL Datasheet Cover
RCD051N20TL Datasheet Page 2 RCD051N20TL Datasheet Page 3 RCD051N20TL Datasheet Page 4 RCD051N20TL Datasheet Page 5 RCD051N20TL Datasheet Page 6 RCD051N20TL Datasheet Page 7 RCD051N20TL Datasheet Page 8 RCD051N20TL Datasheet Page 9 RCD051N20TL Datasheet Page 10 RCD051N20TL Datasheet Page 11

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RCD051N20TL Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs760mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs8.3nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 25V
FET Feature-
Power Dissipation (Max)850mW (Ta), 20W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageCPT3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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