Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

R6006ANX

R6006ANX

For Reference Only

Part Number R6006ANX
PNEDA Part # R6006ANX
Description MOSFET N-CH 600V 6A TO-220FM
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 12,036
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

R6006ANX Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberR6006ANX
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • R6006ANX Datasheet
  • where to find R6006ANX
  • Rohm Semiconductor

  • Rohm Semiconductor R6006ANX
  • R6006ANX PDF Datasheet
  • R6006ANX Stock

  • R6006ANX Pinout
  • Datasheet R6006ANX
  • R6006ANX Supplier

  • Rohm Semiconductor Distributor
  • R6006ANX Price
  • R6006ANX Distributor

R6006ANX Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds520pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FM
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

IPW60R041P6FKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

77.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

41mOhm @ 35.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 2.96mA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8180pF @ 100V

FET Feature

-

Power Dissipation (Max)

481W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

IRF7466TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12.5mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

STF18N60DM2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ DM2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

295mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 100V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

IRF6715MTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

34A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.6mOhm @ 34A, 10V

Vgs(th) (Max) @ Id

2.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

59nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5340pF @ 13V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 78W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MX

Package / Case

DirectFET™ Isometric MX

2SK4065-DL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12200pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.65W (Ta), 90W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SMP-FD

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

TL431ACLPG

TL431ACLPG

ON Semiconductor

IC VREF SHUNT ADJ TO92-3

PESD12VS1UB,115

PESD12VS1UB,115

Nexperia

TVS DIODE 12V 35V SOD523

H1102NL

H1102NL

Pulse Electronics Network

MODULE XFRMR SGL ETHR LAN 16SOIC

UCLAMP2804L.TCT

UCLAMP2804L.TCT

Semtech

TVS DIODE 2.8V 10V 8SOIC

SE5534AN

SE5534AN

ON Semiconductor

IC OPAMP GP 1 CIRCUIT 8DIP

PIC32MX250F128D-I/PT

PIC32MX250F128D-I/PT

Microchip Technology

IC MCU 32BIT 128KB FLASH 44TQFP

MC74HC00ADR2G

MC74HC00ADR2G

ON Semiconductor

IC GATE NAND 4CH 2-INP 14SOIC

W25Q80DVSNIG

W25Q80DVSNIG

Winbond Electronics

IC FLASH 8M SPI 104MHZ 8SOIC

MAX811SEUS-T

MAX811SEUS-T

Maxim Integrated

IC MPU V-MONITOR 2.93V SOT143-4

MX25L12835FM2I-10G

MX25L12835FM2I-10G

Macronix

IC FLASH 128M SPI 104MHZ 8SOP

BAV70LT1G

BAV70LT1G

ON Semiconductor

DIODE ARRAY GP 100V 200MA SOT23

AD842KQ

AD842KQ

Analog Devices

IC OPAMP GP 1 CIRCUIT 14CERDIP