R1RW0416DGE-2PR#B0
For Reference Only
| Part Number | R1RW0416DGE-2PR#B0 | ||||||||||||||||||
| PNEDA Part # | R1RW0416DGE-2PR-B0 | ||||||||||||||||||
| Description | IC SRAM 4M FAST 44-SOJ | ||||||||||||||||||
| Manufacturer | Renesas Electronics America | ||||||||||||||||||
| Unit Price |
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| In Stock | 100 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Mar 31 - Apr 5 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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R1RW0416DGE-2PR#B0 Resources
| Brand | Renesas Electronics America |
| ECAD Module |
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| Mfr. Part Number | R1RW0416DGE-2PR#B0 |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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R1RW0416DGE-2PR#B0 Specifications
| Manufacturer | Renesas Electronics America |
| Series | - |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM |
| Memory Size | 4Mb (256K x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 12ns |
| Access Time | 12ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-BSOJ (0.400", 10.16mm Width) |
| Supplier Device Package | 44-SOJ |
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Manufacturer Cypress Semiconductor Corp Series GL-S Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 512Mb (32M x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 60ns Access Time 120ns Voltage - Supply 1.65V ~ 3.6V Operating Temperature -40°C ~ 105°C (TA) Mounting Type Surface Mount Package / Case 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package 56-TSOP |
