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PSMN8R5-100ESFQ

PSMN8R5-100ESFQ

For Reference Only

Part Number PSMN8R5-100ESFQ
PNEDA Part # PSMN8R5-100ESFQ
Description MOSFET N-CHANNEL 100V 97A I2PAK
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 5,220
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PSMN8R5-100ESFQ Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberPSMN8R5-100ESFQ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PSMN8R5-100ESFQ, PSMN8R5-100ESFQ Datasheet (Total Pages: 13, Size: 250.01 KB)
PDFPSMN8R5-100ESFQ Datasheet Cover
PSMN8R5-100ESFQ Datasheet Page 2 PSMN8R5-100ESFQ Datasheet Page 3 PSMN8R5-100ESFQ Datasheet Page 4 PSMN8R5-100ESFQ Datasheet Page 5 PSMN8R5-100ESFQ Datasheet Page 6 PSMN8R5-100ESFQ Datasheet Page 7 PSMN8R5-100ESFQ Datasheet Page 8 PSMN8R5-100ESFQ Datasheet Page 9 PSMN8R5-100ESFQ Datasheet Page 10 PSMN8R5-100ESFQ Datasheet Page 11

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PSMN8R5-100ESFQ Specifications

ManufacturerNexperia USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C97A (Ta)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs8.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs44.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3181pF @ 50V
FET Feature-
Power Dissipation (Max)183W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-220-3, Short Tab

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